Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
SOT23
DMP2035U
Dim
A
Min
0.37
Max
0.51
Typ
0.40
H
B C
B
C
D
F
G
H
1.20
2.30
0.89
0.45
1.78
2.80
1.40
2.50
1.03
0.60
2.05
3.00
1.30
2.40
0.915
0.535
1.83
2.90
K
J
F
G
D
K1
L
M
J
K
K1
L
0.013
0.903
-
0.45
0.10
1.10
-
0.61
0.05
1.00
0.400
0.55
M
α
0.085
0.18
0.11
-
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Dimensions Value (in mm)
Z
X
E
C
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
DMP2035U
Document number: DS31830 Rev. 4 - 2
6 of 7
www.diodes.com
October 2013
? Diodes Incorporated
相关PDF资料
DMP2035UTS-13 MOSFET 2P-CH 20V 6.04A 8TSSOP
DMP2035UVT-7 MOSFET P CH 20V 6A TSOT26
DMP2039UFDE-7 MOSF P CH 25V 6.7A U-DFN2020-6E
DMP2039UFDE4-7 MOSF P CH 25V 7.3A X2-DFN2020-6
DMP2066LDM-7 MOSFET P-CH 20V 4.6A SOT-26
DMP2066LSD-13 MOSFET P-CH DUAL 20V 5.8A 8-SOIC
DMP2066LSN-7 MOSFET P-CH 20V 4.6A SC59-3
DMP2066LSS-13 MOSFET P-CH 20V 6.5A 8-SOIC
相关代理商/技术参数
DMP2035U-7-CUT TAPE 制造商:DIODES 功能描述:DMP2035U Series 20 V 35 mOhm P-Channel Enhancement Mode Mosfet - SOT-23-3
DMP2035UQ-7 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET Low Input/Output Leakage
DMP2035UTS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2035UTS-13 功能描述:MOSFET MOSFET P-CHAN RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2035UVT 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:-20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2035UVT-13 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:-20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2035UVT-7 功能描述:MOSFET P-Ch -20V ENH Mode 35mOhm -4.5V -6.0A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2039UFDE 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET